描述:TO-220 Plastic-Encapsulate Transistors
13003 TRANSISTOR (NPN)
FEATURES
· power switching applications
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
V CBO
Collector-Base V oltage 700 V
V CEO Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 9 V
I C Collector Current -Continuous 1.5 A
P C Collector Power Dissipation 2 W
T
J
Junction Temperature 150
T
stg
Storage Temperature -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol
S ymbol
Test conditions Min Typ Max Unit
Collector-base breakdown voltage V (BR)CBO I C =5mA, I E=0 700 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
=10mA, I
B
=0 400 V
Emitter-base breakdown voltage V (BR)EBO I E=2mA, I C=0 9 V
Collector cut-off current I CBO V CB=700V,I E=0 1 mA
Collector cut-off current I CEO V CE=400V,I B=0 0.5 mA
Emitter cut-off current I EBO V EB=9V, I C=0 1 mA
h
FE1
V
CE
=5V, I
C
= 0.5 A 8 40
DC